Heterojunction (HJT) photovoltaic technology, with its unique "perfect mirror-symmetric" structure combining N-type crystalline silicon and amorphous silicon thin films, integrates core advantages such as high conversion efficiency, low degradation rate, and outstanding power generation performance. Its superior temperature coefficient and weak-light response result in significantly higher power output than traditional technologies under high-temperature and low-light conditions. Additionally, HJT cells inherently feature excellent bifaciality and require only four process steps, laying a solid foundation for future tandem integration with perovskite technology to surpass efficiency limits, making it a key pathway for advancing the next generation of photovoltaic industrialization.